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ZXMP6A18KTC

ZXMP6A18KTC

数据手册.pdf
Diodes(美台) 分立器件

ZXMP6A18KTC 编带

表面贴装型 P 通道 6.8A(Ta) 2.15W(Ta) TO-252-3


得捷:
MOSFET P-CH 60V 6.8A TO252-3


立创商城:
P沟道 60V 6.8A


贸泽:
MOSFET 60V P-Channel 6.8A MOSFET


艾睿:
Compared to traditional transistors, ZXMP6A18KTC power MOSFETs, developed by Diodes Zetex, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 10100 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode. This device is made with tmos technology.


Allied Electronics:
MOSFET P-Channel 60V 10.4A DPAK


安富利:
Trans MOSFET P-CH 60V 10.4A 3-Pin2+Tab DPAK T/R


Chip1Stop:
Trans MOSFET P-CH 60V 10.4A 3-Pin2+Tab DPAK T/R


Verical:
Trans MOSFET P-CH 60V 6.8A 3-Pin2+Tab DPAK T/R


儒卓力:
**DUAL -60V -10A 55mOhm TO252-3 **


Win Source:
MOSFET P-CH 60V 6.8A DPAK


DeviceMart:
MOSFET P-CHAN 60V DPAK


ZXMP6A18KTC中文资料参数规格
技术参数

额定电压DC -60.0 V

额定电流 -10.4 A

通道数 1

漏源极电阻 55 mΩ

极性 P-CH

耗散功率 10.1 W

阈值电压 1 V

输入电容 1.58 nF

栅电荷 23.0 nC

漏源极电压Vds 60 V

漏源击穿电压 60 V

连续漏极电流Ids 10.4 A

上升时间 5.8 ns

输入电容Ciss 1580pF @30VVds

额定功率Max 2.15 W

下降时间 23 ns

工作温度Max 150 ℃

工作温度Min 55 ℃

耗散功率Max 2.15W Ta

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-252-3

外形尺寸

长度 6.73 mm

宽度 6.22 mm

高度 2.39 mm

封装 TO-252-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

海关信息

ECCN代码 EAR99

ZXMP6A18KTC引脚图与封装图
暂无图片
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