ZX5T851ASTZ

Bipolar Transistors - BJT NPN 60V 4.5A 3Pin

Bipolar BJT Transistor NPN 60V 4.5A 130MHz 1W Through Hole E-Line TO-92 compatible

得捷:
TRANS NPN 60V 4.5A E-LINE

艾睿:
The NPN ZX5T851ASTZ general purpose bipolar junction transistor, developed by Diodes Zetex, is the perfect solution for your high-current density needs. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans GP BJT NPN 60V 4.5A 3-Pin E-Line Box

Chip1Stop:
Trans GP BJT NPN 60V 4.5A 3-Pin E-Line Box