ZTX657STZ
数据手册.pdfDiodes(美台)
分立器件
Trans GP BJT NPN 300V 0.5A Automotive 3Pin E-Line Box
Bipolar BJT Transistor NPN 300V 500mA 30MHz 1W Through Hole E-Line TO-92 compatible
得捷:
TRANS NPN 300V 0.5A E-LINE
贸泽:
Bipolar Transistors - BJT NPN Super E-Line
艾睿:
Diodes Zetex brings you the solution to your high-voltage BJT needs with their NPN ZTX657STZ general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C.
安富利:
Trans GP BJT NPN 300V 0.5A 3-Pin E-Line Box