ZXTN25100DZTA

ZXTN25100DZTA 编带

- 双极 BJT - 单 NPN 100 V 2.5 A 175MHz 2.4 W 表面贴装型 SOT-89-3

得捷:
TRANS NPN 100V 2.5A SOT89-3

立创商城:
NPN 100V 2.5A

贸泽:
Bipolar Transistors - BJT NPN 100V HIGH GAIN

艾睿:
The versatility of this NPN ZXTN25100DZTA GP BJT from Diodes Zetex makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 4460 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans GP BJT NPN 100V 2.5A 4-Pin3+Tab SOT-89 T/R

Chip1Stop:
Trans GP BJT NPN 100V 2.5A 4-Pin3+Tab SOT-89 T/R

Verical:
Trans GP BJT NPN 100V 2.5A 4460mW Automotive 4-Pin3+Tab SOT-89 T/R

Win Source:
TRANS NPN 100V 2.5A SOT89