ZXTN2011ZTA

ZXTN2011Z 系列 4.5 A 100 V 表面贴装 NPN 硅 中等功率 晶体管 - SOT-89

- 双极 BJT - 单 NPN 100 V 4.5 A 130MHz 2.1 W 表面贴装型 SOT-89-3

得捷:
TRANS NPN 100V 4.5A SOT89-3

立创商城:
NPN 100V 4.5A

贸泽:
Bipolar Transistors - BJT 100V NPN Med Power

艾睿:
Design various electronic circuits with this versatile NPN ZXTN2011ZTA GP BJT from Diodes Zetex. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2100 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

Allied Electronics:
100V NPN Low Saturation Transistor SOT89

安富利:
Trans GP BJT NPN 100V 4.5A 4-Pin3+Tab SOT-89 T/R

Chip1Stop:
Trans GP BJT NPN 100V 4.5A 2100mW Automotive 4-Pin3+Tab SOT-89 T/R

Verical:
Trans GP BJT NPN 100V 4.5A 2100mW Automotive 4-Pin3+Tab SOT-89 T/R

Win Source:
TRANS NPN 100V 4.5A SOT89