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ZXTP07012EFFTA

ZXTP07012EFFTA

数据手册.pdf
Diodes(美台) 分立器件

12V, SOT23F, PNP medium power transistor

- 双极 BJT - 单 PNP 250MHz 表面贴装型 SOT-23F


得捷:
TRANS PNP 12V 4A SOT23F


立创商城:
PNP 12V 4A


艾睿:
The PNP ZXTP07012EFFTA general purpose bipolar junction transistor, developed by Diodes Zetex, is the perfect solution for your high-current density needs. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 12 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.


Allied Electronics:
Transistor PNP 12V 4A SOT23F


安富利:
Trans GP BJT PNP 12V 4A 3-Pin SOT-23F T/R


Chip1Stop:
Trans GP BJT PNP 12V 4A 3-Pin SOT-23F T/R


DeviceMart:
TRANS PNP MED PWR 12V SOT23F-3


Win Source:
TRANS PNP 12V 4A SOT23F-3


ZXTP07012EFFTA中文资料参数规格
技术参数

极性 PNP

耗散功率 2000 mW

击穿电压集电极-发射极 12 V

集电极最大允许电流 4A

最小电流放大倍数hFE 500 @10mA, 2V

额定功率Max 1.5 W

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 2000 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-23-3

外形尺寸

封装 SOT-23-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

ZXTP07012EFFTA引脚图与封装图
暂无图片
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型号 制造商 描述 购买
ZXTP07012EFFTA Diodes 美台 12V, SOT23F, PNP medium power transistor 搜索库存