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ZXMN7A11G
Vishay Semiconductor 威世 分立器件

DIODES INC.  ZXMN7A11G  晶体管, MOSFET, N沟道, 3.8 A, 70 V, 130 mohm, 10 V, 1 V

The is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin-finish annealed over copper lead-frame terminals as per MIL-STD-202 standard. This new generation of Trench MOSFET from Zetex utilizes unique structure that combines the benefits of low ON-resistance with fast switching speed. This makes them ideal for high efficiency and low voltage applications.

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Low threshold
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Low gate drive
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Halogen-free, Green device
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Qualified to AEC-Q101 standards for high reliability
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Moisture sensitivity level 1 as per J-STD-020
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UL94V-0 Flammability rating
ZXMN7A11G中文资料参数规格
技术参数

针脚数 3

漏源极电阻 130 mΩ

极性 N-Channel

耗散功率 3.9 W

阈值电压 1 V

漏源极电压Vds 70 V

连续漏极电流Ids 3.80 A

工作温度Max 150 ℃

工作温度Min -55 ℃

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-223

外形尺寸

封装 SOT-223

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Cut Tape CT

制造应用 Automotive, Defence, Power Management, Motor Drive & Control, Audio, Aerospace, Military

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

军工级 Yes

REACH SVHC版本 2015/12/17

ZXMN7A11G引脚图与封装图
暂无图片
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ZXMN7A11G Vishay Semiconductor 威世 DIODES INC.  ZXMN7A11G  晶体管, MOSFET, N沟道, 3.8 A, 70 V, 130 mohm, 10 V, 1 V 搜索库存