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X28C513JI-12

数据手册.pdf
Xicor 电子元器件分类

5V, Byte Alterable E

DESCRIPTION

The X28C512/513 is an 64K x 8 E2PROM, fabricated with ’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C512/513 is a 5V only device. The X28C512/513 features the JEDEC approved pinout for bytewide memories, compatible with industry standard EPROMS.

FEATURES

•Access Time: 90ns

•Simple Byte and Page Write

—Single 5V Supply

— No External High Voltages or VPP Control Circuits

—Self-Timed

—No Erase Before Write

—No Complex Programming Algorithms

—No Overerase Problem

•Low Power CMOS:

—Active: 50mA

—Standby: 500µA

•Software Data Protection

—Protects Data Against System Level

Inadvertant Writes

•High Speed Page Write Capability

•Highly Reliable Direct Write™ Cell

—Endurance: 100,000 Write Cycles

—Data Retention: 100 Years

•Early End of Write Detection

—DATAPolling

—Toggle Bit Polling

•Two PLCC and LCC Pinouts

—X28C512

—X28C010 E2PROM Pin Compatible

—X28C513

—Compatible with Lower Density E2PROMs

X28C513JI-12中文资料参数规格
封装参数

封装 QCCJ

外形尺寸

封装 QCCJ

其他

产品生命周期 Obsolete

X28C513JI-12引脚图与封装图
暂无图片
在线购买X28C513JI-12
型号 制造商 描述 购买
X28C513JI-12 Xicor 5V, Byte Alterable E 搜索库存
替代型号X28C513JI-12
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: X28C513JI-12

品牌: Xicor

封装:

当前型号

5V, Byte Alterable E

当前型号

型号: CAT28C512GI-12T

品牌: 安森美

封装: QCCJ

功能相似

512K位CMOS并行EEPROM 512K-Bit CMOS PARALLEL EEPROM

X28C513JI-12和CAT28C512GI-12T的区别

型号: CAT28C513GI12

品牌: 安森美

封装: QCCJ

功能相似

512KB CMOS Parallel EEPROM Memory

X28C513JI-12和CAT28C513GI12的区别

型号: CAT28C513G12

品牌: 安森美

封装: QCCJ

功能相似

64KX8 EEPROM 5V, 120ns, PQCC32, LEAD AND HALOGEN FREE, PLASTIC, LCC-32

X28C513JI-12和CAT28C513G12的区别