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X28C513JI-12T1

数据手册.pdf
Intersil 英特矽尔 电子元器件分类

5V ,字节EEPROM可变 5V, Byte Alterable EEPROM

The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with ’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The X28C512, X28C513 feature the JEDEC approved pin out for byte wide memories, compatible with industry standard EPROMS.

Features

• Access Time: 90ns

• Simple Byte and Page Write

  - Single 5V supply

    • No external high voltages or VPP control circuits

  - Self-timed

    • No erase before write

    • No complex programming algorithms

    • No overerase problem

• Low Power CMOS

   - Active: 50mA

   - Standby: 500µA

• Software Data Protection

   - Protects data against system level inadvertent writes

• High Speed Page Write Capability

• Highly Reliable Direct Write™ Cell

   - Endurance: 100,000 write cycles

   - Data retention: 100 years

   - Early end of write detection

   - DATA polling

   - Toggle bit polling

• Two PLCC and LCC Pinouts

   - X28C512

     • X28C010 EPROM pin compatible

   - X28C513

     • Compatible with lower density EEPROMs

• Pb-Free Plus Anneal Available RoHS Compliant

X28C513JI-12T1中文资料参数规格
封装参数

封装 QCCJ

外形尺寸

封装 QCCJ

其他

产品生命周期 Unknown

符合标准

RoHS标准 RoHS Compliant

X28C513JI-12T1引脚图与封装图
暂无图片
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