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X28C512JZ-15

数据手册.pdf
Intersil 英特矽尔 电子元器件分类

5V ,字节EEPROM可变 5V, Byte Alterable EEPROM

5V, Byte Alterable EEPROM

The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with ’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The X28C512, X28C513 feature the JEDEC approved pin out for byte wide memories, compatible with industry standard EPROMS.

Features

• Access Time: 90ns

• Simple Byte and Page Write

\- Single 5V supply

• No external high voltages or VPPcontrol circuits

\- Self-timed

• No erase before write

• No complex programming algorithms

• No overerase problem

• Low Power CMOS

\- Active: 50mA

\- Standby: 500µA

• Software Data Protection

\- Protects data against system level inadvertent writes

• High Speed Page Write Capability

• Highly Reliable Direct Write™Cell

\- Endurance: 100,000 write cycles

\- Data retention: 100 years

\- Early end of write detection

\- DATApolling

\- Toggle bit polling

• Two PLCC and LCC Pinouts

\- X28C512

• X28C010 EPROM pin compatible

\- X28C513

• Compatible with lower density EEPROMs

• Pb-Free Plus Anneal Available RoHS Compliant

X28C512JZ-15中文资料参数规格
技术参数

存取时间Max 150 ns

工作温度Max 70 ℃

工作温度Min 0 ℃

封装参数

安装方式 Surface Mount

引脚数 32

封装 PLCC

外形尺寸

封装 PLCC

其他

产品生命周期 Unknown

符合标准

RoHS标准 RoHS Compliant

X28C512JZ-15引脚图与封装图
暂无图片
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