锐单电子商城 , 一站式电子元器件采购平台!
  • 电话:400-990-0325

WS57C256F-35P

数据手册.pdf
ST Microelectronics 意法半导体 电子元器件分类

高速32K ×8 CMOS EPROM HIGH SPEED 32K x 8 CMOS EPROM

GENERAL DESCRIPTION

The WS57C256F is a High Performance 32K x 8 UV Erasable EPROM. It is manufactured using an advanced CMOS process technology enabling it to operate at speeds as fast as 35 ns Address Access Time tACC and 35 ns Chip Enable Time tCE. It was designed utilizing WSI"s patented self-aligned split gate EPROM cell, resulting in a low power device with a very cost effective die size. The low standby power capability of this 256 K product 200 µA in a CMOS interface environment is especially attractive.

•Fast Access Time

— tACC= 35 ns

— tCE= 35 ns

•Low Power Consumption

— 200 µA Standby ICC

•Immune to Latch-UP

 — Up to 200 mA

•ESD Protection Exceeds 2000 Volts

•Available in 300 Mil DIP and PLDCC

•DESC SMD No. 5962-86063

WS57C256F-35P中文资料参数规格
其他

产品生命周期 Unknown

WS57C256F-35P引脚图与封装图
暂无图片
在线购买WS57C256F-35P
型号 制造商 描述 购买
WS57C256F-35P ST Microelectronics 意法半导体 高速32K ×8 CMOS EPROM HIGH SPEED 32K x 8 CMOS EPROM 搜索库存
替代型号WS57C256F-35P
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: WS57C256F-35P

品牌: ST Microelectronics 意法半导体

封装:

当前型号

高速32K ×8 CMOS EPROM HIGH SPEED 32K x 8 CMOS EPROM

当前型号

型号: QP7C271-35DMB

品牌: E2V

封装:

功能相似

OTP ROM, 32KX8, 35ns, CMOS, CDIP28, 0.3INCH, CERAMIC, DIP-28

WS57C256F-35P和QP7C271-35DMB的区别

型号: QP7C271-35PC

品牌: E2V

封装:

功能相似

OTP ROM, 32KX8, 35ns, CMOS, PDIP28, 0.3INCH, PLASTIC, DIP-28

WS57C256F-35P和QP7C271-35PC的区别

型号: QP7C271-35PI

品牌: E2V

封装:

功能相似

OTP ROM, 32KX8, 35ns, CMOS, PDIP28, 0.3INCH, PLASTIC, DIP-28

WS57C256F-35P和QP7C271-35PI的区别