W29C040-90B

Flash Parallel 5V 4M-bit 512K x 8 90ns 32Pin PDIP

GENERAL DESCRIPTION

The  W29C040 is a 4-megabit, 5-volt only CMOS page mode Flash Memory organized as 512K  ´8 bits. The device can be written erased and programmed in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell  architecture of the W29C040 results in fast write erase/program operations with extremely low current consumption compared to other comparable 5-volt flash memory products. The device can also be erased and programmed by using standard EPROM programmers.

FEATURES

·  Single 5-volt write erase and program operations

·  Fast page-write operations

  - 256 bytes per page

  - Page write erase/program cycle: 5 mS typ.

  - Effective byte-write erase/program cycle time: 19.5 mS

  - Optional software-protected data write

·  Fast chip-erase operation: 50 mS

·  Two 16 KB boot blocks with lockout

·  Page write erase/program cycles: 50K typ.

·  Read access time: 70/90/120 nS

·  Ten-year data retention

·  Software and hardware data protection

·  Low power consumption

  - Active current: 25 mA typ.

  - Standby current: 20 mA typ.

·Automaticwrite erase/program timing with internal VPP generation

·  End of write erase/program detection

\- Toggle bit

\- Data polling

·  Latched address and data

·  All inputs and outputs directly TTL compatible

·  JEDEC standard byte-wide pinouts

·  Available packages: 32-pin 600 mil DIP, TSOP and PLCC