VS-FB180SA10P
数据手册.pdfVISHAY VS-FB180SA10P 单晶体管 双极, N沟道, 180 A, 100 V, 6.5 mohm, 10 V
The is a 5th generation high current density N channel Power MOSFET is paralleled into a compact, high power module providing the best combination of switching, ruggedized design, very low on-resistance and cost effectiveness.
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- Easy to use and parallel
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- Dynamic dv/dt rating
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- Fully avalanche rated
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- Simple drive requirements
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- Low drain to case capacitance
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- Low internal inductance