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VS-GB100DA60UP

VS-GB100DA60UP

数据手册.pdf

VISHAY VS-GB100DA60UP IGBT Array & Module Transistor, NPN, 125A, 2.4V, 447W, 600V, SOT-227

The is a Warp 2 speed IGBT Module features HEXFRED® anti-parallel diodes with ultra-soft reverse recovery and easy to assemble and parallel. It is designed for increased operating efficiency in power conversion such as UPS, SMPS and welding, induction heating.

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Square RBSOA
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Fully isolated package
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Very low internal inductance
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Industry standard outline
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Direct mounting to heat sink
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Higher switching frequency up to 150kHz
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Lower conduction losses and switching losses
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Low EMI, requires less snubbing
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UL approved file E78996
VS-GB100DA60UP中文资料参数规格
技术参数

极性 NPN

耗散功率 447 W

击穿电压集电极-发射极 600 V

额定功率Max 447 W

工作温度Max 150 ℃

工作温度Min -40 ℃

封装参数

引脚数 4

封装 SOT-227-4

外形尺寸

封装 SOT-227-4

物理参数

工作温度 -40℃ ~ 150℃ TJ

其他

产品生命周期 Obsolete

包装方式 Bulk

制造应用 Power Management, Maintenance & Repair, HVAC

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

VS-GB100DA60UP引脚图与封装图
暂无图片
在线购买VS-GB100DA60UP
型号 制造商 描述 购买
VS-GB100DA60UP Vishay Semiconductor 威世 VISHAY VS-GB100DA60UP IGBT Array & Module Transistor, NPN, 125A, 2.4V, 447W, 600V, SOT-227 搜索库存
替代型号VS-GB100DA60UP
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: VS-GB100DA60UP

品牌: Vishay Semiconductor 威世

封装: SOT-227-4

当前型号

VISHAY VS-GB100DA60UP IGBT Array & Module Transistor, NPN, 125A, 2.4V, 447W, 600V, SOT-227

当前型号

型号: VS-GB90DA60U

品牌: 威世

封装: SOT-227-4

类似代替

Trans IGBT Module N-CH 600V 147A 4Pin SOT-227

VS-GB100DA60UP和VS-GB90DA60U的区别