VQ2001P
数据手册.pdfP沟道增强型MOSFET晶体管 P-Channel Enhancement-Mode MOSFET Transistors
FEATURES
High-Side Switching
Low On-Resistance: 1.5Ω
Moderate Threshold: –3.1 V
Fast Switching Speed: 17 ns
Low Input Capacitance: 60 pF
BENEFITS
Ease in Driving Switches
Low Offset Error Voltage
Low-Voltage Operation
High-Speed Switching
Easily Driven Without Buffer
APPLICATIONS
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
Battery Operated Systems
Power Supply, Converter Circuits
Motor Control