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VND14NV04-1

VND14NV04-1

数据手册.pdf

“ OMNIFET II ” :全AUTOPROTECTED功率MOSFET “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET

Description

The VNB14NV04, VND14NV04, and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and

overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.

■ Linear current limitation

■ Thermal shutdown

■ Short circuit protection

■ Integrated clamp

■ Low current drawn from input pin

■ Diagnostic feedback through input pin

■ ESD protection

■ Direct access to the gate of the Power MOSFET analog driving

■ Compatible with standard Power MOSFET

VND14NV04-1中文资料参数规格
技术参数

输出接口数 1

输出电流 12 A

供电电流 0.1 mA

漏源极电阻 35.0 mΩ

极性 N-Channel

耗散功率 74 W

漏源击穿电压 40.0 V

连续漏极电流Ids 12.0 A

输出电流Max 12 A

输出电流Min 12 A

输入数 1

耗散功率Max 74000 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-251-3

外形尺寸

封装 TO-251-3

物理参数

工作温度 -40℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

VND14NV04-1引脚图与封装图
暂无图片
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