VND10N06
数据手册.pdfISO高侧智能功率固态继电器 ISO HIGH SIDE SMART POWER SOLID STATE RELAY
Description
The and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
■ Linear current limitation
■ Thermal shutdown
■ Short circuit protection
■ Integrated clamp
■ Low current drawn from input pin
■ Logic level input threshold
■ ESD protection
■ Schmitt trigger on input
■ High noise immunity
