UB20BCT-E3/8W
数据手册.pdf整流器 20A,100V,35NS,DUAL FER PLANAR
FEATURES
• Oxide planar chip junction
• Ultrafast recovery time
• Soft recovery characteristics
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C for TO-263AB package
• Solder dip 260 °C, 40 s for TO-220AB package
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
得捷:
DIODE RECT 20A 100V 35NS TO263AB
贸泽:
整流器 20A,100V,35NS,DUAL FER PLANAR
艾睿:
Diode Switching 100V 20A 3-Pin2+Tab TO-263AB T/R
安富利:
20A,100V,35NS,DUAL FER PLANAR