UMH11N-TP

SOT-363 NPN 50V 50mA

- 双极 BJT - 阵列 - 预偏置 2 个 NPN 预偏压式（双） 50V 50mA 250MHz 150mW 表面贴装型 SOT-363

立创商城:
UMH11N-TP

得捷:
TRANS 2NPN PREBIAS 0.15W SOT363

艾睿:
You can apply the benefits of traditional BJTs to digital circuits using the NPN UMH11N-TP digital transistor, developed by Micro Commercial Components. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 150 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It is made in a dual configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Win Source:
TRANS 2NPN PREBIAS 0.15W SOT363