UNR31A900L

特点•内置电阻晶体管 •PNP硅外延刨床晶..

集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO| -50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO| -50V 集电极连续输出电流IC Collector CurrentIC| -80mA 基极输入电阻R1 Input ResistanceR1| 1KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter ResistanceR2| 10KΩ/Ohm 电阻比R1/R2 Resistance Ratio| 0.1 直流电流增益hFE DC Current GainhFE| 30 截止频率fT Transtion FrequencyfT| 80MHz 耗散功率Pc Power Dissipation| 0.1W/100mW Description & Applications| Features •Transistors with built-in Resistor •Silicon PNP epitaxial planer transistor •Suitable for high-density mounting and downsizing of the equipment •Contribute to low power consumption 描述与应用| 特点 •内置电阻 •PNP硅外延刨床晶体管 •适用于高密度安装和精简的设备 •有助于低功耗