TSFF5210-CS12

红外发射器, 高速, 870 nm, 10 °, T-1 3/4 5mm, 180 mW/Sr, 15 ns, 15 ns

The is a 870nm high speed Infrared Emitting Diode in GaAlAs double hetero DH technology with high radiant power, high speed and moulded in a clear. It is suitable for use in infrared video data transmission between camcorder and TV set, free air data transmission systems with high modulation frequencies or high data transmission rate requirements, smoke-automatic fire detectors.

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High reliability

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High radiant intensity

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±10° Angle of half sensitivity

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Low forward voltage

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Good spectral matching with Si photo-detectors