TSTA7100

VISHAY  TSTA7100  红外发射器, 5 °, TO-18, 100 mA, 1.4 V, 600 ns

The is a 875nm Infrared Emitting Diode in GaAlAs technology with lens.

.

Hermetically sealed

.

High reliability

.

High radiant power

.

High radiant intensity

.

ϕ = ±5° Angle of half intensity

.

Low forward voltage

.

Suitable for high pulse current operation

.

Good spectral matching with Si photodetectors