TSHG6200

850 nm 视角 20° 120 mW/sr 通孔 5 mm 红外 LED - T-1 3/4

The is a 850nm Infrared Emitting Diode in GaAlAs double hetero DH technology with high radiant power and high speed, moulded in a clear. It is suitable for high pulse current operation and good spectral matching with CMOS cameras.

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High reliability

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High radiant power

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High radiant intensity

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Low forward voltage

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±10° Angle of half intensity