TIP120

STMICROELECTRONICS  TIP120  单晶体管 双极, 达林顿, NPN, 60 V, 65 W, 5 A, 1000 hFE

The from STMicroelectronics is a through hole complementary power darlington transistor in TO-220 package. This device manufactured in planar technology with "base island" layout and monolithic darlington configuration resulting in exceptional high gain performance coupled with very low saturation voltage.

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Collector to emitter voltage Vce is 60V

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Collector current Ic is 5A

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Power dissipation Pd is 65W

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Collector to emitter saturation voltage of 4V at 5A collector current

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DC current gain hFE of 1000

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Operating junction temperature range from 150°C