SI3429EDV-T1-GE3

TSOP P-CH 20V 8A

20V, 8A, 21MOHM, P-CH, TSOP-6

立创商城:
SI3429EDV-T1-GE3

艾睿:
Compared to traditional transistors, SI3429EDV-T1-GE3 power MOSFETs, developed by Vishay, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 2000 mW. This device utilizes TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

Verical:
Trans MOSFET P-CH 20V 8A 6-Pin TSOP

Win Source:
MOSFET P-CHAN 20V TSOP6S