SI4590DY-T1-GE3

SOIC-8 N+P 100V,100V 5.6A,3.4A 72mΩ,205mΩ

This power MOSFET from Vishay can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 2300 mW. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N|P channel MOSFET transistor operates in enhancement mode.

立创商城:
SI4590DY-T1-GE3

艾睿:
Trans MOSFET N/P-CH 100V 4.5A/2.5A 8-Pin SOIC N T/R

安富利:
Trans MOSFET N/P-CH 100V/100V 4.5A 2.5A 8-Pin SO T/R

Verical:
Trans MOSFET N/P-CH 100V 4.5A/2.5A 8-Pin SOIC N T/R