SQJ422EP-T1_GE3

SQJ422EP-T1_GE3 编带

N-CH 40-V PPAK SO-8L

立创商城:
N沟道 40V 74A

艾睿:
As an alternative to traditional transistors, the SQJ422EP-T1_GE3 power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 83000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology.

安富利:
Trans MOSFET N-CH 40V 75A 8-Pin PowerPAK SO T/R