SN74CB3Q3257
TI
德州仪器
电子元器件分类
4 位 2 选 1 FET 多路复用器/多路解复用器，2.5V/3.3V 低压高带宽总线开关
The device is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance ron.
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- High-Bandwidth Data Path
up to 500 MHz
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- 5-V Tolerant I/Os With Device Powered Up or
Powered Down
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- Low and Flat ON-State Resistance ron
Characteristics Over Operating Range
ron= 4 Ω Typical
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- Rail-to-Rail Switching on Data I/O Ports
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- 0- to 5-V Switching With 3.3-V VCC
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- 0- to 3.3-V Switching With 2.5-V VCC
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- Bidirectional Data Flow With Near-Zero
Propagation Delay
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- Low Input and Output Capacitance Minimizes
Loading and Signal Distortion
CioOFF= 3.5 pF Typical
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- Fast Switching Frequency f OE = 20 MHz
Maximum
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- Data and Control Inputs Provide Undershoot
Clamp Diodes
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- Low Power Consumption
ICC = 0.7 mA Typical
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- VCC Operating Range From 2.3 V to 3.6 V
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- Data I/Os Support 0- to 5-V Signaling Levels
0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V
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- Control Inputs Can Be Driven by TTL or
5-V/3.3-V CMOS Outputs
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- Ioff Supports Partial-Power-Down Mode Operation
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- Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
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- ESD Performance Tested Per JESD 22
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- 2000-V Human Body Model
A114-B, Class II
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- 1000-V Charged-Device Model C101
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- Supports Both Digital and Analog Applications:
USB Interface,Differential Signal Interface,
Bus Isolation, Low-Distortion Signal Gating1