S29GL016A10BAIR20
数据手册.pdf64 Megabit, 32 Megabit, and 16 Megabit 3V only Page Mode Flash Memory featuring 200nm MirrorBit Process Technology
General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.
Distinctive Characteristics
Architectural Advantages
Single power supply operation
– 3-Volt read, erase, and program operations
Manufactured on 200 nm MirrorBit process technology
Secured Silicon Sector region
– 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
– May be programmed and locked at the factory or by the customer Flexible sector architecture
– 64Mb uniform sector models: 128 32 Kword 64 KB sectors
– 64 Mb boot sector models: 127 32 Kword 64 KB sectors
+ 8 4Kword 8KB boot sectors
– 32 Mb uniform sector models: 64 32Kword 64 KB sectors
– 32 Mb boot sector models: 63 32Kword 64 KB sectors
+ 8 4Kword 8KB boot sectors
– 16 Mb boot sector models: 31 31Kword 64 KB sectors
+ 8 4Kword 8 KB boot sectors
Compatibility with JEDEC standards
– Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection
100,000 erase cycles typical per sector
20-year data retention typical
Performance Characteristics
High performance
– 90 ns access time
– 4-word/8-byte page read buffer
– 25 ns page read times
– 16-word/32-byte write buffer which reduces overall programming time for multiple-word updates
Low power consumption typical values at 3.0 V, 5 MHz
– 18 mA typical active read current
– 50 mA typical erase/program current
– 1 µA typical standby mode current
Package options
– 48-pin TSOP
– 56-pin TSOP
– 64-ball Fortified BGA
– 48-ball fine-pitch BGA
– 56-ball fine pitch BGA MCP-compatible for cellular handsets
