SFH4715AS

红外发射器, 860 nm, 90 °, SMD, 780 mW/Sr, 11 ns, 14 ns

The from Osram is an OSLON black series high efficiency 850nm, 90°, high power infrared emitter. This has low thermal resistance maximum 9K/W and superior corrosion robustness. The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, stress test qualification for automotive grade discrete semiconductors. It has 11/14ns rise and fall time of Ie 10% and 90% of Ie max IF = 3A, RL = 50 ohm, 3.2V <= 3.6V forward voltage IF = 1A, tp = 10ms, 3.35V <= 3.85V forward voltage IF = 1.5A, tp = 100µs, 3.8V <= 4.7V forward voltage IF = 3A, tp = 100µs. The temperature coefficient of Ie or Φe IF = 1A, tp = 10ms is -0.3%/K, temperature coefficient of VF IF = 1A, tp = 10ms is -2mV/K, temperature coefficient of wavelength IF = 1A, tp = 10ms is 0.3nm/K. It is suitable for use in CCTV surveillance, eye tracking, gesture recognition, safety systems and CCTV.

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780 >= 500mW/sr radiant intensity at IF= 1A, tp= 10ms, IR light source with high efficiency

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1V reverse voltage, 1500mA forward current, 3A surge current tp = 2ms, D = 0

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Power consumption Ptot is 5.8W, double stack emitter

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ESD withstand voltage is 2KV according to ANSI/ ESDA/ JEDEC JS-001 - HBM

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860nm peak wavelength IF = 1A, tp = 10ms, 850nm centroid wavelength IF = 1A, tp = 10ms

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Total radiant flux is 2000mW IF = 1.5A, tp= 100µs/1340mW IF=1A, tp= 10ms

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30nm spectral bandwidth at 50% of Imax IF = 1A, tp = 10ms

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±45° half angle, dimensions of active chip area is 1mm x 1mm L x W

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Operating temperature range from -40°C to 125°C