S34MS01G204BHI013

Tape And Reel / 4Bit Ecc, X8 And X16 i/o, 3V Vcc Nand Flash Memory For Embedded

FLASH - NAND Memory IC 1Gb 64M x 16 Parallel 45ns 63-BGA 11x9

得捷:
IC FLASH 1GBIT PARALLEL 63BGA

艾睿:
SLC NAND Flash Parallel 1.8V 1G-bit 64M x 16 63-Pin BGA T/R

安富利:
The Spansion S34MS01G2 is offered in 1.8 VCC and VCCQ power supply, and with x8 or x16 I/O interface. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The page size for x8 is 2048 + spare bytes; for x16 1024 + spare words.Each block can be programmed and erased up to 100,000 cycles with ECC error correction code on. To extend the lifetime of NAND flash devices, the implementation of an ECC is mandatory.The chip supports CE# don"t care function. This function allows the direct download of the code from the NAND flash memory device by a microcontroller, since the CE# transitions do not stop the read operation.The devices have a Read Cache feature that improves the read throughput for large files. During cache reading, the devices load the data in a cache register while the pre