S29GL128S10FAIV23
数据手册.pdfIC FLASH MEM 128Mbit PAGE 64BGA
FLASH - NOR Memory IC 128Mb 8M x 16 Parallel 100ns 64-FBGA 13x11
立创商城:
S29GL128S10FAIV23
贸泽:
Flash Memory Nor
艾睿:
NOR Flash Parallel 3V/3.3V 128M-bit 8M x 16 100ns 64-Pin Fortified BGA T/R
安富利:
The Spansion® S29GL128S is MirrorBit Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.
Win Source:
IC FLASH 128MBIT PARALLEL 64FBGA / FLASH - NOR Memory IC 128Mb 8M x 16 Parallel 100 ns 64-FBGA 13x11