STB14NM50N
数据手册.pdfSTMICROELECTRONICS STB14NM50N 晶体管, MOSFET, N沟道, 12 A, 500 V, 0.28 ohm, 10 V, 3 V
N 通道 MDmesh™，500V，STMicroelectronics
得捷:
MOSFET N-CH 500V 12A D2PAK
欧时:
STMicroelectronics MDmesh 系列 N沟道 MOSFET 晶体管 STB14NM50N, 12 A, Vds=500 V, 3引脚 TO-263封装
贸泽:
MOSFET N-Ch 500V 0.246 ohm 12 A MDmesh II
e络盟:
STMICROELECTRONICS STB14NM50N 晶体管, MOSFET, N沟道, 12 A, 500 V, 0.28 ohm, 10 V, 3 V
艾睿:
Compared to traditional transistors, STB14NM50N power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 90000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device is made with mdmesh ii technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans MOSFET N-CH 500V 12A 3-Pin2+Tab D2PAK T/R
富昌:
STB14NM50N 系列 N 沟道 550 V 0.32 Ohm MDMesh II 功率 Mosfet 表面贴装 - D2PAK
Verical:
Trans MOSFET N-CH 500V 12A 3-Pin2+Tab D2PAK T/R
儒卓力:
**N-CH 500V 12A 320mOhm TO263-3 **
力源芯城:
500V,12A,N沟道MOSFET
DeviceMart:
MOSFET N-CH 500V 12A D2PAK
Win Source:
MOSFET N-CH 500V 12A D2PAK