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STF32NM50N

STF32NM50N

数据手册.pdf

500V,22A,N沟道MOSFET

N-Channel 500V 22A Tc 35W Tc Through Hole TO-220FP


得捷:
MOSFET N CH 500V 22A TO-220FP


艾睿:
Compared to traditional transistors, STF32NM50N power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 35000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with mdmesh technology. This N channel MOSFET transistor operates in enhancement mode.


安富利:
Trans MOSFET N-CH 500V 22A 3-Pin3+Tab TO-220FP Tube


Chip1Stop:
Trans MOSFET N-CH 500V 22A 3-Pin3+Tab TO-220FP Tube


Verical:
Trans MOSFET N-CH 500V 22A 3-Pin3+Tab TO-220FP Tube


力源芯城:
500V,22A,N沟道MOSFET


STF32NM50N中文资料参数规格
技术参数

通道数 1

极性 N-CH

耗散功率 35 W

阈值电压 4 V

漏源极电压Vds 500 V

连续漏极电流Ids 22A

上升时间 9.5 ns

输入电容Ciss 1973pF @50VVds

额定功率Max 35 W

下降时间 23.6 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 35W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

封装 TO-220-3

物理参数

工作温度 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

STF32NM50N引脚图与封装图
暂无图片
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型号 制造商 描述 购买
STF32NM50N ST Microelectronics 意法半导体 500V,22A,N沟道MOSFET 搜索库存