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STP12N60M2

STP12N60M2

数据手册.pdf

MOSFET N-channel 600V, 0.395Ω typ., 9A MDmesh M2 Power MOSFET in TO-220 package

N-Channel 600V 9A Tc 85W Tc Through Hole TO-220


得捷:
MOSFET N-CH 600V 9A TO220


贸泽:
MOSFET N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in TO-220 package


艾睿:
This STP12N60M2 power MOSFET from STMicroelectronics can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 85000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with mdmesh m2 technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.


安富利:
Trans MOSFET N-CH 600V 9A 3-Pin TO-220AB Tube


Verical:
Trans MOSFET N-CH 600V 9A 3-Pin3+Tab TO-220AB Tube


STP12N60M2中文资料参数规格
技术参数

通道数 1

漏源极电阻 395 mΩ

耗散功率 85 W

阈值电压 2 V

漏源极电压Vds 600 V

漏源击穿电压 600 V

上升时间 9.2 ns

输入电容Ciss 538pF @100VVds

下降时间 18 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 85W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

封装 TO-220-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 无铅

STP12N60M2引脚图与封装图
暂无图片
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