STB26NM60ND
数据手册.pdfN 通道 FDmesh™ 功率 MOSFET,STMicroelectronics### MOSFET 晶体管,STMicroelectronics
N 通道 FDmesh™ 功率 MOSFET,STMicroelectronics
得捷:
MOSFET N-CH 600V 21A D2PAK
欧时:
N 通道 FDmesh™ 功率 MOSFET,STMicroelectronics### MOSFET 晶体管,STMicroelectronics
贸泽:
MOSFET N-CH 600V 0.145Ohm typ. 21A FDmesh II
艾睿:
Use STMicroelectronics&s; STB26NM60ND power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 190000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device utilizes fdmesh ii technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
Chip1Stop:
Trans MOSFET N-CH 600V 22A 3-Pin2+Tab D2PAK T/R
Verical:
Trans MOSFET N-CH 600V 21A 3-Pin2+Tab D2PAK T/R