STP6NM60N
数据手册.pdfN沟道600V - 0.85ヘ - 4.6A - TO- 220 - TO- 220FP - IPAK - DPAK第二代MDmesh⑩功率MOSFET N-channel 600V - 0.85ヘ - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh⑩ Power MOSFET
通孔 N 通道 600 V 4.6A（Tc） 45W（Tc） TO-220AB
得捷:
MOSFET N-CH 600V 4.6A TO-220
贸泽:
MOSFET N Ch 600V 0.85 Ohm 4.6A
艾睿:
Make an effective common source amplifier using this STP6NM60N power MOSFET from STMicroelectronics. Its maximum power dissipation is 45000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes mdmesh technology. This N channel MOSFET transistor operates in enhancement mode.
Verical:
Trans MOSFET N-CH 600V 4.6A 3-Pin3+Tab TO-220AB Tube
Win Source:
MOSFET N-CH 600V 4.6A TO-220