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STF30N10F7

STF30N10F7

数据手册.pdf

N 沟道 100 V 25 A 23 mOhm STripFET VII DeepGATE 功率 Mosfet - TO-220

N-Channel 100V 24A Tc 25W Tc Through Hole TO-220FP


得捷:
MOSFET N-CH 100V 24A TO220FP


欧时:
MOSFET N-Ch 100V 24A STripFET TO220FP


艾睿:
If you need to either amplify or switch between signals in your design, then STMicroelectronics&s; STF30N10F7 power MOSFET is for you. Its maximum power dissipation is 25000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This device utilizes stripfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.


安富利:
Trans MOSFET N-CH 100V 24A 3-Pin TO-220FP Tube


富昌:
N沟道 100 V 23 mOhm STripFET VII DeepGATE 功率 Mosfet - TO-220


Chip1Stop:
Trans MOSFET N-CH 100V 24A 3-Pin3+Tab TO-220FP Tube


Verical:
Trans MOSFET N-CH 100V 24A 3-Pin3+Tab TO-220FP Tube


Win Source:
MOSFET N-CH 100V 35A TO-220FP


STF30N10F7中文资料参数规格
技术参数

极性 N-CH

耗散功率 25 W

漏源极电压Vds 100 V

连续漏极电流Ids 24A

上升时间 17.5 ns

输入电容Ciss 1270pF @50VVds

额定功率Max 25 W

下降时间 5.6 ns

工作温度Max 175 ℃

工作温度Min -55 ℃

耗散功率Max 25W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

封装 TO-220-3

物理参数

工作温度 -55℃ ~ 175℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准

含铅标准 Lead Free

STF30N10F7引脚图与封装图
暂无图片
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