STD8N65M5
数据手册.pdfSTMICROELECTRONICS STD8N65M5 功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.56 ohm, 10 V, 4 V
N 通道 MDmesh™ M5 系列,STMicroelectronics
MDmesh M5 功率 MOSFET 优化用于高功率 PFC 和 PWM 拓扑。 主要特征包括每硅面积的低通态损耗硅片面积与低栅极电荷。 它们设计用于节能、紧凑型且可靠的硬切换应用,例如太阳能转换器、消费产品电源和电子照明控制。
得捷:
MOSFET N-CH 650V 7A DPAK
欧时:
### N 通道 MDmesh™ M5 系列,STMicroelectronicsMDmesh M5 功率 MOSFET 优化用于高功率 PFC 和 PWM 拓扑。 主要特征包括每硅面积的低通态损耗硅片面积与低栅极电荷。 它们设计用于节能、紧凑型且可靠的硬切换应用,例如太阳能转换器、消费产品电源和电子照明控制。### MOSFET 晶体管,STMicroelectronics
立创商城:
N沟道 650V 7A
e络盟:
晶体管, MOSFET, N沟道, 7 A, 650 V, 0.56 ohm, 10 V, 4 V
艾睿:
If you need to either amplify or switch between signals in your design, then STMicroelectronics&s; STD8N65M5 power MOSFET is for you. Its maximum power dissipation is 70000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device utilizes mdmesh v technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans MOSFET N-CH 650V 7A 3-Pin2+Tab DPAK T/R
Chip1Stop:
Trans MOSFET N-CH Si 650V 7A 3-Pin2+Tab DPAK T/R
TME:
Transistor: N-MOSFET; unipolar; 650V; 4.4A; 70W; DPAK
Verical:
Trans MOSFET N-CH Si 650V 7A 3-Pin2+Tab DPAK T/R
儒卓力:
**MOSFET 650V 600mOhm 7A TO252 **
力源芯城:
650V,0.56Ω,7A,N沟道功率MOSFET
DeviceMart:
MOSFET N-CH 650V 7A DPAK
Win Source:
MOSFET N-CH 650V 7A DPAK