STB100N10F7

N 通道 STripFET™ H7 系列，STMicroelectronicsSTripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。

N 通道 STripFET™ H7 系列，STMicroelectronics

STripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。

得捷:
MOSFET N-CH 100V 80A D2PAK

欧时:
### N 通道 STripFET™ H7 系列，STMicroelectronicsSTripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。### MOSFET 晶体管，STMicroelectronics

贸泽:
MOSFET N-Ch 100V 0.0068 Ohm typ. 80A STripFET

e络盟:
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0068 ohm, 10 V, 4.5 V

艾睿:
This STB100N10F7 power MOSFET from STMicroelectronics can be used for amplification in your circuit. Its maximum power dissipation is 150000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes stripfet vii technology.

安富利:
Trans MOSFET N-CH 100V 80A 3-Pin D2PAK T/R

富昌:
N沟道 100 V 0.0068 Ohm 表面贴装 功率 Mosfet - D2PAK-3

Chip1Stop:
Trans MOSFET N-CH 100V 80A 3-Pin2+Tab D2PAK T/R

Verical:
Trans MOSFET N-CH 100V 80A 3-Pin2+Tab D2PAK T/R

力源芯城:
100V,80A,N沟道功率MOSFET