STP11N65M2

STMICROELECTRONICS  STP11N65M2  功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V

通孔 N 通道 650 V 7A（Tc） 85W（Tc） TO-220

得捷:
MOSFET N-CH 650V 7A TO220

e络盟:
晶体管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V

艾睿:
Create an effective common drain amplifier using this STP11N65M2 power MOSFET from STMicroelectronics. Its maximum power dissipation is 85000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with mdmesh ii plus technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans MOSFET N-CH 650V 7A 3-Pin TO-220 Tube

Chip1Stop:
Trans MOSFET N-CH 650V 7A 3-Pin3+Tab TO-220 Tube

Verical:
Trans MOSFET N-CH 650V 7A 3-Pin3+Tab TO-220AB Tube

儒卓力:
**N-CH 650V 7A 680mOhm TO220 **