STW31N65M5

N 通道 MDmesh™ M5 系列，STMicroelectronicsMDmesh M5 功率 MOSFET 优化用于高功率 PFC 和 PWM 拓扑。 主要特征包括每硅面积的低通态损耗硅片面积与低栅极电荷。 它们设计用于节能、紧凑型且可靠的硬切换应用，例如太阳能转换器、消费产品电源和电子照明控制。### MOSFET 晶体管，STMicroelectronics

N 通道 MDmesh™ M5 系列，STMicroelectronics

MDmesh M5 功率 MOSFET 优化用于高功率 PFC 和 PWM 拓扑。 主要特征包括每硅面积的低通态损耗硅片面积与低栅极电荷。 它们设计用于节能、紧凑型且可靠的硬切换应用，例如太阳能转换器、消费产品电源和电子照明控制。

得捷:
MOSFET N-CH 650V 22A TO247

欧时:
STMicroelectronics MDmesh M5 系列 N沟道 MOSFET 晶体管 STW31N65M5, 22 A, Vds=710 V, 3引脚 TO-247封装

贸泽:
MOSFET N-Ch 650 V 0.124 Ohm 22 A MDmesh M5

艾睿:
Compared to traditional transistors, STW31N65M5 power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 150000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with mdmesh technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 650V 22A 3-Pin3+Tab TO-247 Tube

富昌:
N-Channel 650 V 150 W 0.148 Ohm Flange Mount Mdmesh V MOSFET - TO-247

Chip1Stop:
Trans MOSFET N-CH 650V 22A 3-Pin3+Tab TO-247 Tube

TME:
Transistor: N-MOSFET; unipolar; 650V; 13.9A; 150W; TO247-3

Verical:
Trans MOSFET N-CH 650V 22A 3-Pin3+Tab TO-247 Tube

力源芯城:
650V,22A,N沟道MOSFET

DeviceMart:
MOSFET N-CH 650V 22A TO-247