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STP25N60M2-EP

STP25N60M2-EP

数据手册.pdf

晶体管, MOSFET, N沟道, 18 A, 600 V, 0.175 ohm, 10 V, 3 V

N-Channel 600V 18A Tc 150W Tc Through Hole TO-220


得捷:
MOSFET N-CH 600V 18A TO220


贸泽:
MOSFET N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220 package


e络盟:
功率场效应管, MOSFET, N沟道, 600 V, 18 A, 0.175 ohm, TO-220AB, 通孔


艾睿:
This STP25N60M2-EP power MOSFET from STMicroelectronics can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 150000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This device utilizes mdmesh m2 technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.


Verical:
Trans MOSFET N-CH 600V 18A 3-Pin3+Tab TO-220AB Tube


STP25N60M2-EP中文资料参数规格
技术参数

通道数 1

针脚数 3

漏源极电阻 0.19 Ω

耗散功率 150 W

阈值电压 2 V

漏源极电压Vds 600 V

上升时间 10 ns

输入电容Ciss 1090pF @100VVds

下降时间 16 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 150W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

封装 TO-220-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 无铅

STP25N60M2-EP引脚图与封装图
暂无图片
在线购买STP25N60M2-EP
型号 制造商 描述 购买
STP25N60M2-EP ST Microelectronics 意法半导体 晶体管, MOSFET, N沟道, 18 A, 600 V, 0.175 ohm, 10 V, 3 V 搜索库存