STD2NK90ZT4
数据手册.pdfSTMICROELECTRONICS STD2NK90ZT4 功率场效应管, MOSFET, N沟道, 2.1 A, 900 V, 5 ohm, 10 V, 3.75 V
N 通道 MDmesh™ SuperMESH™，700V 至 1200V，STMicroelectronics
得捷:
MOSFET N-CH 900V 2.1A DPAK
立创商城:
N沟道 900V 2.1A TO-252-3DPAK
欧时:
STMicroelectronics MDmesh, SuperMESH 系列 Si N沟道 MOSFET STD2NK90ZT4, 2.1 A, Vds=900 V, 3引脚 DPAK TO-252封装
贸泽:
MOSFET N-Ch 900 Volt 2.1Amp Zener SuperMESH
e络盟:
功率场效应管, MOSFET, N沟道, 900 V, 2.1 A, 5 ohm, TO-252 DPAK, 表面安装
艾睿:
Increase the current or voltage in your circuit with this STD2NK90ZT4 power MOSFET from STMicroelectronics. Its maximum power dissipation is 70000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with supermesh technology.
安富利:
Trans MOSFET N-CH 900V 2.1A 3-Pin2+Tab DPAK T/R
富昌:
N-沟道 900 V 6.5 Ohm 表面贴装 齐纳保护 SuperMESH MosFet TO-252-3
Chip1Stop:
Trans MOSFET N-CH 900V 2.1A 3-Pin2+Tab DPAK T/R
TME:
Transistor: N-MOSFET; unipolar; 900V; 1.3A; 70W; DPAK
Verical:
Trans MOSFET N-CH 900V 2.1A 3-Pin2+Tab DPAK T/R
Newark:
# STMICROELECTRONICS STD2NK90ZT4 Power MOSFET, N Channel, 2.1 A, 900 V, 5 ohm, 10 V, 3.75 V
儒卓力:
**N-CH 900V 2A 7Ohm TO252-3 **
DeviceMart:
MOSFET N-CH 900V 2.1A DPAK
Win Source:
MOSFET N-CH 900V 2.1A DPAK
