STR1P2UH7

-20V,-1.4A,100mΩ,P沟道功率MOSFET

表面贴装型 P 通道 20 V 1.4A（Ta） 350mW（Tc） SOT-23-3

得捷:
MOSFET P-CH 20V 1.4A SOT-23

艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the STR1P2UH7 power MOSFET, developed by STMicroelectronics. Its maximum power dissipation is 350 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This P channel MOSFET transistor operates in enhancement mode. This device is made with stripfet h7 technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans MOSFET P-CH 20V 1.4A 3-Pin SOT-23 T/R

Verical:
Trans MOSFET P-CH 20V 1.4A 3-Pin SOT-23 T/R

儒卓力:
**P-CH 20V 1,4A 0,1Ohm@4,5V SOT23 **

力源芯城:
-20V,-1.4A,100mΩ,P沟道功率MOSFET