STD4NK100Z

N 通道 MDmesh™ SuperMESH™，700V 至 1200V，STMicroelectronics### MOSFET 晶体管，STMicroelectronics

N 通道 MDmesh™ SuperMESH™，700V 至 1200V，STMicroelectronics

### MOSFET ，STMicroelectronics

得捷:
MOSFET N-CH 1000V 2.2A DPAK

欧时:
STMicroelectronics MDmesh, SuperMESH 系列 Si N沟道 MOSFET STD4NK100Z, 2.2 A, Vds=1000 V, 3引脚 DPAK TO-252封装

e络盟:
功率场效应管, MOSFET, N沟道, 1 kV, 2.2 A, 5.6 ohm, TO-252 DPAK, 表面安装

艾睿:
Make an effective common source amplifier using this STD4NK100Z power MOSFET from STMicroelectronics. Its maximum power dissipation is 90000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with supermesh technology.

安富利:
Trans MOSFET N-CH 1000V 2.2A 3-Pin DPAK T/R

Verical:
Trans MOSFET N-CH 1KV 2.2A Automotive 3-Pin2+Tab DPAK T/R