SPD03N50C3ATMA1
数据手册.pdfINFINEON SPD03N50C3ATMA1 晶体管, MOSFET, N沟道, 3.2 A, 560 V, 1.25 ohm, 10 V, 3 V
表面贴装型 N 通道 3.2A（Tc） 38W（Tc） PG-TO252-3-1
得捷:
MOSFET N-CH 500V 3.2A TO252-3
立创商城:
N沟道 500V 3.2A
e络盟:
功率场效应管, MOSFET, N沟道, 560 V, 3.2 A, 1.25 ohm, TO-252, 表面安装
艾睿:
If you need to either amplify or switch between signals in your design, then Infineon Technologies&s; SPD03N50C3ATMA1 power MOSFET is for you. Its maximum power dissipation is 38000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes coolmos technology.
安富利:
Trans MOSFET N-CH 500V 3.2A 3-Pin TO-252 T/R
Verical:
Trans MOSFET N-CH 500V 3.2A 3-Pin2+Tab DPAK T/R
Newark:
# INFINEON SPD03N50C3ATMA1 MOSFET Transistor, N Channel, 3.2 A, 560 V, 1.25 ohm, 10 V, 3 V