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SPD30N03S2L10GBTMA1

SPD30N03S2L10GBTMA1

数据手册.pdf
Infineon(英飞凌) 分立器件

DPAK N-CH 30V 30A

Description:

With the new OptiMOS™ 30V product family, sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package.

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life.

Available in halfbridge configuration power stage 5x6

Summary of Features:

.
Ultra low gate and output charge
.
Lowest on-state resistance in small footprint packages
.
Easy to design in

Benefits:

.
Increased battery lifetime
.
Improved EMI behavior making external snubber networks obsolete
.
Saving costs
.
Saving space
.
Reducing power losses
SPD30N03S2L10GBTMA1中文资料参数规格
技术参数

额定功率 100 W

极性 N-CH

耗散功率 100 W

漏源极电压Vds 30 V

连续漏极电流Ids 30A

上升时间 13 ns

输入电容Ciss 1550pF @25VVds

额定功率Max 100 W

下降时间 17 ns

工作温度Max 175 ℃

工作温度Min -55 ℃

耗散功率Max 100W Tc

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-252-3

外形尺寸

长度 6.5 mm

宽度 6.22 mm

高度 2.3 mm

封装 TO-252-3

物理参数

工作温度 -55℃ ~ 175℃ TJ

其他

产品生命周期 Not Recommended for New Designs

包装方式 Tape & Reel TR

制造应用 Mainboard, VRD/VRM, Onboard charger

符合标准

RoHS标准 RoHS Compliant

含铅标准 无铅

SPD30N03S2L10GBTMA1引脚图与封装图
暂无图片
在线购买SPD30N03S2L10GBTMA1
型号 制造商 描述 购买
SPD30N03S2L10GBTMA1 Infineon 英飞凌 DPAK N-CH 30V 30A 搜索库存
替代型号SPD30N03S2L10GBTMA1
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: SPD30N03S2L10GBTMA1

品牌: Infineon 英飞凌

封装: TO-252-3 N-CH 30V 30A

当前型号

DPAK N-CH 30V 30A

当前型号

型号: IPD30N03S2L10ATMA1

品牌: 英飞凌

封装: DPAK N-CH 30V 30A

类似代替

Infineon OptiMOS 系列 Si N沟道 MOSFET IPD30N03S2L10ATMA1, 30 A, Vds=30 V, 3引脚 DPAK TO-252封装

SPD30N03S2L10GBTMA1和IPD30N03S2L10ATMA1的区别