SPP08P06PHXKSA1

INFINEON  SPP08P06PHXKSA1  晶体管, MOSFET, P沟道, -8.8 A, -60 V, 0.23 ohm, -10 V, -3 V

SIPMOS® P 通道 MOSFET

**Infineon** SIPMOS® 小信号 P 通道 MOSFET 具有多种功能，可能包括增强模式、连续漏极电流（约低至 80A）及宽工作温度范围。 SIPMOS 功率可用于多种应用，包括电信、eMobility、笔记本、直流/直流设备以及汽车工业。

· 符合 AEC Q101 标准（请参阅数据表）

· 无铅引线电镀，符合 RoHS 标准

得捷:
MOSFET P-CH 60V 8.8A TO220-3

欧时:
Infineon SIPMOS 系列 Si P沟道 MOSFET SPP08P06PHXKSA1, 8.8 A, Vds=60 V, 3引脚 TO-220封装

艾睿:
Make an effective common source amplifier using this SPP08P06PHXKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 42000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This P channel MOSFET transistor operates in enhancement mode. This device is made with sipmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.

Chip1Stop:
Trans MOSFET P-CH 60V 8.8A Automotive 3-Pin3+Tab TO-220 Tube

TME:
Transistor: P-MOSFET; unipolar; -60V; -8.8A; 42W; PG-TO220-3

Verical:
Trans MOSFET P-CH 60V 8.8A Automotive 3-Pin3+Tab TO-220 Tube

Newark:
# INFINEON  SPP08P06PHXKSA1  MOSFET Transistor, P Channel, -8.8 A, -60 V, 0.23 ohm, -10 V, -3 V

Win Source:
MOSFET P-CH 60V 8.8A TO-220