SPD15P10PGBTMA1
数据手册.pdfINFINEON SPD15P10PGBTMA1 晶体管, 射频FET, -100 V, -15 A, 128 W, TO-252
SIPMOS® P 通道 MOSFET
**Infineon** SIPMOS® 小信号 P 通道 MOSFET 具有多种功能,可能包括增强模式、连续漏极电流(约低至 80A)及宽工作温度范围。 SIPMOS 功率可用于多种应用,包括电信、eMobility、笔记本、直流/直流设备以及汽车工业。
· 符合 AEC Q101 标准(请参阅数据表)
· 无铅引线电镀,符合 RoHS 标准
得捷:
MOSFET P-CH 100V 15A TO252-3
欧时:
Infineon SIPMOS 系列 Si P沟道 MOSFET SPD15P10PGBTMA1, 15 A, Vds=100 V, 3引脚 DPAK TO-252封装
立创商城:
P沟道 100V 15A
贸泽:
MOSFET P-Ch -100V 15A DPAK-2
艾睿:
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the SPD15P10PGBTMA1 power MOSFET. Its maximum power dissipation is 128000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with sipmos technology.
TME:
Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Verical:
Trans MOSFET P-CH 100V 15A Automotive 3-Pin2+Tab DPAK T/R
Newark:
# INFINEON SPD15P10PGBTMA1 RF FET Transistor, -100 V, -15 A, 128 W, TO-252
Win Source:
MOSFET P-CH 100V 15A TO252-3